SPP24N60C3 Datasheet and Specifications PDF

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low e.

* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A PG-TO220-3-1 Type SPP24.

· Ultra low gate charge · Ultra low effective capacitance · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Vo.

*Static drain-source on-resistance: RDS(on) ≤0.16Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
* Ultra low gate charge
* Ultra low effective capacitance
* Improved transconductance
*.