SPW11N60S5 Datasheet and Specifications PDF

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* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance VDS RDS(on) ID 600 0.38 11 P-TO247 V Ω A Type SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lo.

*Static drain-source on-resistance: RDS(on)≤380mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
* Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Vo.