SPW20N60S5 Datasheet
SPW20N60S5 Datasheet (Infineon)
Infineon
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* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
VDS RDS(on) ID
600 0.19 20
P-TO247
V Ω A
Type SPW20N60S5
Package P-TO247
Ordering Code Q67040-S4238
Marking 20N60.
SPW20N60S5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and .
*Static drain-source on-resistance:
RDS(on)≤190mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Vol.