SPW47N60CFD Datasheet and Specifications PDF

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TM Power Transistor Product Summary V DS R DS(on),max ID 600 V
* New revolutionary high voltage technology
* Intrinsic fast-recovery body diode
* Extremely low reverse recovery charge
* Ultra low gate charge
* Extreme dv /dt rated 0.083 Ω 46 A PG-TO247
* High peak current .

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW47N60CFD ISPW47N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤83mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L.

*Static drain-source on-resistance: RDS(on)≤83mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High Peak Current Capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.