SPW52N50C3 Datasheet
SPW52N50C3 Datasheet (Infineon)
Infineon
CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low ef.
* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO-247
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
SPW52N50C3
VDS @ Tjmax 560
V
RDS(on)
0.07 Ω
ID
52 A
PG-TO247
Type SPW52N50C3.
SPW52N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r.
*Static drain-source on-resistance:
RDS(on)≤70mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Improved Transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Volt.