SRAF1090 Datasheet
SRAF1090 Datasheet (Taiwan Semiconductor)
Taiwan Semiconductor
SRAF1020 - SRAF10150 Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85.
Isolated Plastic package. Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheeling, and polarity pr.
SRAF1090 Datasheet (Mospec Semiconductor)
Mospec Semiconductor
MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construc.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring.
SRAF1090 Datasheet (Mospec Semiconductor)
Mospec Semiconductor
MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construc.
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring.