SS38 Datasheet PDF

The SS38 is a SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER.

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Part NumberSS38 Datasheet
ManufacturerYS
Overview DATA SHEET SEMICONDUCTOR SS32~SS320 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE- 20 to 200 Volts CURRENT- 3.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classi. Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications Low profile package Built-in strain relief Metal to silicon rectifier. majority carrier conduction Low power loss,high efficiency High surge capacity For use in low voltage high frequency i.
Part NumberSS38 Datasheet
DescriptionSchottky Rectifier
Manufactureronsemi
Overview The SS32−S310 series includes a high−efficiency, low power loss, general−propose Schottky rectifiers. The clipbonded leg structure provides high thermal performance and low electrical resistance. Thes.
* Metal to Silicon Rectifiers, Majority Carrier Conduction
* Low
*Forward Voltage Drop
* Easy Pick and Place
* High
*Surge Current Capability
* This Device is Pb
*Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKING DIAGRAM $Y &Z &3 Sxyz $Y&Z&3 Sxyz G = Logo = .
Part NumberSS38 Datasheet
Description(SS32 - SS39) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
ManufacturerContinental Device India
Overview SYMBOL SS32 SS33 SS34 SS35 SS36 SS38 SS39 S300 VRRM 50 60 20 30 40 80 90 100 Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified C. nt Ta=25oC at Rated DC Blocking Voltage Ta=100oC Thermal Resistance Junction to Ambient Operating Junction Temperature Range Storage Temperature Range IFSM *VF *IR **Rth (j-a) **Rth (j-a) Tj Tstg 0.50 80 0.70 0.5 20 TYP55 TYP17 - 55 to +125 - 55 to +150 0.85 V mA mA ºC/W ºC/W ºC ºC * Pulse Test W.
Part NumberSS38 Datasheet
Description3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
ManufacturerWon-Top Electronics
Overview ® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide Passivation  Guard Ring for Transient and ESD P.
* Low Forward Voltage
* Epitaxial Construction with Oxide Passivation
* Guard Ring for Transient and ESD Protection
* Surge Overload Rating to 100A Peak
* Low Power Loss A
* Fast Switching
* Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes C B F HG E .