SSC8035GS6 Datasheet
SSC8035GS6 Datasheet (VBsemi)
VBsemi
SSC8035GS6-VB SSC8035GS6-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6.
* TrenchFET® Power MOSFET
* 100 % Rg Tested
APPLICATIONS
* For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
G1 S2
3D
Top View
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source .
SSC8035GS6 Datasheet (AFSEMI)
AFSEMI
Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are need.
VDS VGS
RDSon TYP 51mR@-10V
ID
* Applications
* Load Switch
* Portable Devices
* DCDC conversion
-30V ±12V
60mR@-4V5 98mR@-2V5
-4A
* Pin configuration
* General Description
Top View
This device is particularly suited for low voltage
application such as portable equipment, power
manageme.