SSD2504S Datasheet
SSD2504S Datasheet (SeCoS Halbleitertechnologie GmbH)
SeCoS Halbleitertechnologie GmbH
The SSD2504S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . .
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* 100% EAS Guaranteed
* Green Device Available
MARKING
2504S Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size 13 inch
A BC
D
Gate
Drain
*
Source
GE
K HF .
SSD2504S Datasheet (VBsemi)
VBsemi
SSD2504S-VB SSD2504S-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252 FEATURES • TrenchFET® Power MOSFET •.
* TrenchFET® Power MOSFET
* 150 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
* Primary Side Switch
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
.