SSF6008 Datasheet and Specifications PDF

The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatabi.

ge Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 20 30
*55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source.

The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatabil.

* Advanced trench process technology
* avalanche energy, 100% test
* Fully characterized avalanche voltage and current
* Lead free product ID =84A BV=60V R DS (ON)=8mΩ DESCRIPTION The SSF6008 is a new generation of high voltage and low current N
*Channel enhancement mode trench power MOSFET. This n.