SSG4228 Datasheet and Specifications PDF

SSG4228 Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) 6.8 6.0 Qg (Typ.) 15 nC SO-8 S1 1 G1 2 S2 3 G2 4.

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Set Top Box
* Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, .

SSG4228 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications. The SSG42.

Advanced high cell density Trench technology Super low gate charge Green Device Available PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.70 5.10 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP..