| Part Number | SSM3J36FS Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS SSM3J36FS ○ Power Management Switches • 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) . reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 m. |
SSM3J36FS Datasheet and Specifications PDF
The SSM3J36FS is a Silicon P-Channel MOSFET.
| Part Number | SSM3J36FS Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
SSM3J36FS
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.450 at VGS = -4.5 V
-20
0.500 at VGS = -2.5 V
0.600 at VGS = -1.8 V
3
2 1 SC−75 / SOT−416
ID (A) -.
* TrenchFET® power MOSFET * 100 % R tested * Fast switching speed APPLICATIONS * Load / power switch for portable devices * Drivers: relays, solenoids, displays * Battery operated systems G D P-Channel MOSFET G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARA. |