SSPS924NE Datasheet
SSPS924NE Datasheet (SeCoS Halbleitertechnologie GmbH)
SeCoS Halbleitertechnologie GmbH
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. DFN3x3-8PP B D C FEATURES Low RDS(on) .
Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E θ A d b g APPLICATION DC-DC converters and power management in portable and battery-powered products such.
SSPS924NE Datasheet (VBsemi)
VBsemi
SSPS924NE-VB SSPS924NE-VB Datasheet Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.0120 at VGS = 4.5 V 0.0160 at VGS = 2.5 V 0.0190 at VGS = 1.8 V ID (A.
* Trench power MOSFET
APPLICATIONS
* DC/DC
* Notebook system power
* POL
D1
D2
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Puls.