| Part Number | SSS7N60B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * * 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratin. |
SSS7N60B Datasheet and Specifications PDF
The SSS7N60B is a 600V N-Channel MOSFET.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | SSS7N60B Datasheet |
|---|---|
| Description | N-Channel 650V Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
SSS7N60B-VB
SSS7N60B-VB Datasheet
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Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
0
VGS = 10.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) APPLICATIONS * Server and telecom power supplies * Switch mode power supplies (SMPS) * Power factor correction power supplies (PFC. |
| Part Number | SSS7N60B Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SSS7N60B
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-.
*With TO-220F package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *Load switch *Power management *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |