ST2341S23RG Datasheet and Specifications PDF

The ST2341S23RG is a P-Channel Enhancement Mode MOSFET.

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Part NumberST2341S23RG Datasheet
ManufacturerStanson Technology
Overview ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored t. -20V/-3.3A, RDS(ON) = 30m-ohm (Typ.) @VGS = -4.5V -20V/-2.8A, RDS(ON) = 40m-ohm @VGS = -2.5V -20V/-2.3A, RDS(ON) = 53m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3.
Part NumberST2341S23RG Datasheet
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview ST2341S23RG ST2341S23RG P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5..
* TrenchFET® Power MOSFET
* 100 % Rg Tested APPLICATIONS
* For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Sou.