STB15N80K5 Datasheet and Specifications PDF

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and .

Order code VDS STB15N80K5 STF15N80K5 800 V STP15N80K5 STW15N80K5 RDS(on)max 0.375 Ω ID 14 A PTOT 190 W 35 W 190 W
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultra low gate charge
* 100% avalanche tested
* Zener-protected Applications
* Switching applications .

Isc N-Channel MOSFET Transistor STB15N80K5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.

*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .