STB18N65M5 Datasheet
STB18N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout s.
Order codes STB18N65M5 STD18N65M5
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VDSS @ TJmax 710 V
RDS(on) max < 0.22 Ω
ID 15 A
TAB
TAB
2 3 1
2 3 1
Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1.
D2PAK
DPAK
Applications
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Internal schem.
STB18N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati.
*Higher VDSS rating
*Excellent switching performance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
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