STB21N65M5 Datasheet and Specifications PDF

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout .

Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed
* Worldwide best RDS(on) * area
* Higher VDSS rating
* High dv/dt capability
* Excellent sw.

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t.

*With TO-263( D2PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STB21N65M5
*APPLICATIONS
*Power supply
*Switchi.