STB28NM50N Datasheet and Specifications PDF

These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s.

Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N
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* VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 1 2 3 D²PAK TO-247 Application Switching applications Figure 1. .

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t.

*With TO-263( D2PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STB28NM50N
*APPLICATIONS
*Power supply
*Switchi.