STB30N65M5 Datasheet and Specifications PDF

MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known company’s PowerMESH™ horizontal layout. The resulting product has an .

Type STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω ID 1 3 3 1 2 21 A 21 A(1) 21 A 21 A 21 A 3 12 D²PAK TO-220FP I²PAK 1. Limited only by maximum temperature allowed
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·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu.

*Drain Current
*ID=22A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 139mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*Swi.