STB43N65M5 Datasheet
STB43N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) ·100% avalanche tested ·Mini.
*Drain Current
*ID= 42A@ TC=25℃
*Drain Source Voltage-
: VDSS= 650V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 63mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching application
ABSOLUTE MAXIMUM RATINGS(.
STB43N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely.
Order code
VDS RDS(on) max. ID
PTOT
STB43N65M5 650 V 0.063 Ω 42 A 250 W
* Designed for automotive applications and AEC-Q101 qualified
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% avalanche tested
Applications
* Switching applications
D.