STD13NM60ND Datasheet
STD13NM60ND Datasheet (STMicroelectronics)
STMicroelectronics
AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resista.
TAB
23 1 DPAK
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STD13NM60ND
650 V
380 mΩ
11 A
* Fast-recovery body diode
* Low gate charge and input capacitance
*
Low on-resistance RDS(on)
* 100% avalanche tested
* High dv/dt ruggedness
Applications
G(1)
* Switching applications
S.
STD13NM60ND Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Drain Current ID= 11A@ TC=25℃
*Drain Source Voltage-
: VDSS=600V(Min)
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE .