| Part Number | STF30N65M5 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal l.
Order codes
STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω
22 A 22 A(1) 22 A 22 A 22 A
1. Limited only by maximum temperature allowed
* Worldwide best RDS(on)*area * Higher VDS. |
STF30N65M5 Datasheet and Specifications PDF
The STF30N65M5 is a N-CHANNEL POWER MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 16.4 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | STF30N65M5 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Con.
*Drain Current *ID=22A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 139mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Swi. |