STP100N10F7 Datasheet and Specifications PDF

The STP100N10F7 is a TO-220 N-Channel MOSFET.

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Part NumberSTP100N10F7 Datasheet
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor STP100N10F7 ·FEATURES ·With To-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for.
*With To-220 package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
Part NumberSTP100N10F7 Datasheet
DescriptionTO-220C N-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor ·FEATURES ·Very low on-resistance ·Very low gate charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCH.
*Very low on-resistance
*Very low gate charge
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STP100N10F7
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drai.
Part NumberSTP100N10F7 Datasheet
DescriptionN-channel Power MOSFET
ManufacturerSTMicroelectronics
Overview These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate char. Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Package D2.