| Part Number | STP110N8F7 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg.
Order code STP110N8F7
VDS 80 V
RDS(on)max 7.5 mΩ
ID 80 A
PTOT 170 W
* Among the lowest RDS(on) on the market * Excellent figure of merit (FoM) * Low Crss/Ciss ratio for EMI immunity * High avalanche ruggedness Applications * Switching applications Description This N-channel Power MOSFET utiliz. |
STP110N8F7 Datasheet and Specifications PDF
The STP110N8F7 is a N-channel Power MOSFET.
| Part Number | STP110N8F7 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Cu.
*Drain Current *ID= 80A@ TC=25℃ *Drain Source Voltage- : VDSS= 80V(Min) *Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Swi. |