| Part Number | STP15NM60ND Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Cu.
*Drain Current *ID= 14A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 299mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Sw. |
STP15NM60ND Datasheet and Specifications PDF
The STP15NM60ND is a N-Channel MOSFET.
| Part Number | STP15NM60ND Datasheet |
|---|---|
| Description | N-channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advan.
Type
VDSS (@Tjmax) RDS(on) max
ID 14 A 14 A 14 A(1) 14 A 14 A
3 1
3 12
STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND
650 V
0.299 Ω
D2PAK
2 1 3
I²PAK
TO-247
3 1 2
1 2 3
1. Limited only by maximum temperature allowed * * * * * The worldwide best RDS(on)* ar. |