STP9NM60N Datasheet
STP9NM60N Datasheet (STMicroelectronics)
STMicroelectronics
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of t.
Order codes
STD9NM60N STF9NM60N STP9NM60N
VDSS (@Tjmax)
RDS(on) max.
650 V < 0.745 Ω
ID 6.5 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second generati.
STP9NM60N Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor STP9NM60N FEATURES ·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.745Ω(Max) ·100% avalanch.
*Drain Current
*ID= 6.5A@ TC=25℃
*Drain Source Voltage-
: VDSS= 600V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.745Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching application
ABSOLUTE MAXIMUM RATIN.