| Part Number | STS2301 Datasheet |
|---|---|
| Manufacturer | SamHop Microelectronics |
| Overview | S amHop Microelectronics C orp. S T S 2301 J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -3.4A R DS (O. eakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -4.0A V GS = -2.5V, ID = -2.0A V GS =-1.8V, ID = -1.0A On-S tate Drain Current For. |
STS2301 Datasheet and Specifications PDF
The STS2301 is a P-Channel Enhancement Mode Field Effect Transistor.
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| Part Number | STS2301 Datasheet |
|---|---|
| Description | P-Channel 20V MOSFET |
| Manufacturer | VBsemi |
| Overview |
STS2301-VB
STS2301-VB Datasheet
P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.060 at VGS = - 10 V
- 4.0
- 20
0.065 at VGS = - 4.5 V
- 3.5
.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switch * PA Switch * DC/DC Converters G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Sou. |