| Part Number | STU417S Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
STU417S
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.025 at VGS = - 4.5 V
ID (A)d - 40 - 35
Qg (Typ.) 13 nC
TO-252
S G
FEATU.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested APPLICATIONS * Load Switch * Battery Switch GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS. |
STU417S Datasheet and Specifications PDF
The STU417S is a P-Channel MOSFET.
| Part Number | STU417S Datasheet |
|---|---|
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Manufacturer | SamHop Microelectronics |
| Overview | Green Product STU/D417S Ver 1.2 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -43A R DS(ON) (m Ω) Typ 14 @ VGS=-10V. Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltag. |