STW31N65M5 Datasheet
STW31N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting produc.
Order code
VDS @ TJMAX
RDS(on ) max.
STB31N65M5
STF31N65M5 STP31N65M5
710 V
0.148 Ω
STW31N65M5
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% avalanche tested
ID 22 A
Package D2PAK TO-220FP TO-220 TO-247
G(1)
Applications
* Swit.
STW31N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Con.
*Drain Current
*ID=22A@ TC=25℃
*Drain Source Voltage-
: VDSS= 650V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 148mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Low Drain-Source On-Resistance
APPLICATIONS
*Swi.