| Part Number | TIC225 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Sensitive Gate Triacs ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 5mA(Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe. sistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 2.5 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current Ⅰ Ⅱ IGT Gate trigger current Ⅲ Ⅳ Hold. |
TIC225 Datasheet
The TIC225 is a Triac.
| Part Number | TIC225 |
|---|---|
| Description | SILICON TRIACS |
| Manufacturer | Power Innovations Limited |
| Overview | TIC225 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK JULY 1975 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V O. seconds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 8 70 80 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 5. |
| Part Number | TIC225 |
|---|---|
| Description | SILICON TRIACS |
| Manufacturer | Bourns |
| Overview | TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1) MT1 MT2 G TO-220 PACKAGE (TOP VI. 0 600 V 700 800 8 A 70 A ±1 A 2.2 W 0.9 W -40 to +110 °C -40 to +125 °C 230 °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C de. |