| Part Number | TIC225M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc Triacs
TIC225M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
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*With TO-220 package *Sensitive Gate Triacs *Glass Passivated *Max IGT of 5 mA (Quadrants 1) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state volt. |
TIC225M Datasheet
The TIC225M is a Triacs.
| Part Number | TIC225M |
|---|---|
| Description | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Manufacturer | Comset Semiconductors |
| Overview | This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE M. case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B C D E M S N Unit 100 200 300 400 500 600 700 800 8 70 8 ±1 2.2 0.9 -40 to +110 -40 to +125 230 V A A A A W W °C °C °C 30/10/2012 COMSET SEMICONDUCTORS 1|4 dat. |
| Part Number | TIC225M |
|---|---|
| Description | SILICON TRIACS |
| Manufacturer | Bourns |
| Overview | TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1) MT1 MT2 G TO-220 PACKAGE (TOP VI. 0 600 V 700 800 8 A 70 A ±1 A 2.2 W 0.9 W -40 to +110 °C -40 to +125 °C 230 °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C de. |