| Part Number | TIP130 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to . Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collect. |