| Part Number | TIP136 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement. nction to Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS. |
TIP136 Datasheet PDF
The TIP136 is a PNP Transistor.
| Part Number | TIP136 Datasheet |
|---|---|
| Description | PLASTIC POWER TRANSISTORS |
| Manufacturer | TRANSYS |
| Overview | SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto. ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 80 100 2.0 3.0 2.5 500 1,000 15,000 Collector Emi. |
| Part Number | TIP136 Datasheet |
|---|---|
| Description | (TIP130 - TIP137) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linea. IP137 100 100 V V V A A A W W o o Unit C C * For PNP types voltage and current values are negative. October 1995 1/4 TIP130/TIP131/TIP132/TIP135/TIP136/TIP137 THERMAL DATA R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5 o o C/W C. |
| Part Number | TIP136 Datasheet |
|---|---|
| Description | Darlington Transistors |
| Manufacturer | Multicomp |
| Overview |
TIP131, 132, 136, 137
Darlington Transistors
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137
• Collector-Emitter saturation.
* Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 * Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A * Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter . |