TIP36C Datasheet and Specifications PDF

The TIP36C is a Complementary Power Transistors.

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Part NumberTIP36C Datasheet
ManufacturerMulticomp
Overview TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) .
* Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
* DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.
* Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Dimensions A B C D E F G H I J K L M N O P.
Part NumberTIP36C Datasheet
DescriptionComplementary power transistors
ManufacturerSTMicroelectronics
Overview The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 .
* Low collector-emitter saturation voltage
* Complementary NPN - PNP transistors Applications
* General purpose
* Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with ver.
Part NumberTIP36C Datasheet
DescriptionSilicon Power Transistors
ManufacturerComset Semiconductors
Overview SEMICONDUCTORS PNP TIP36-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching application. rrent -5 A @ Tc < 25° PC Power Dissipation @ Ta < 25° 125 Watts 3.5 TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C Value Unit RthJ-MB From .
Part NumberTIP36C Datasheet
DescriptionComplementary Silicon Power Transistors
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching appl. .