TK10E60W Datasheet and Specifications PDF

The TK10E60W is a Silicon N-Channel MOSFET.

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Part NumberTK10E60W Datasheet
ManufacturerToshiba
Overview TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Su. (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolut.
Part NumberTK10E60W Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E60W，ITK10E60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.38Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% .
*Low drain-source on-resistance: RDS(on) ≤0.38Ω.
*Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.