TK11Q65W Datasheet

The TK11Q65W is a N-Channel MOSFET.

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Part NumberTK11Q65W
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK11Q65W，ITK11Q65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA) ·100%.
*Low drain-source on-resistance: RDS(on) ≤0.44Ω.
*Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.
Part NumberTK11Q65W
DescriptionSilicon N-Channel MOSFET
ManufacturerToshiba
Overview MOSFETs Silicon N-Channel MOS (DTMOS) TK11Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structu. (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. .