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TK20E60W5 Datasheet

The TK20E60W5 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberTK20E60W5
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot.
*Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX)
*Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
Part NumberTK20E60W5
DescriptionN-Channel MOSFET
ManufacturerToshiba
Overview MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(. (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60W5 .