TS820-600T Datasheet and Specifications PDF

Available either in sensitive (TS8) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circu.

ages VVDRRRMM
* 600
* V Average on-state current IT(AV) half sine wave; Tmb< 110 oC
* 5.0
*A RMS on-state current On-state voltage Holding current Latching current Gate trigger current Gate trigger voltage IT(RMS) VTM IH IL IGT VGT all conduction angles IT=16A IT = 50 mA RGK = 1 kΩ IT = 50.

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to.

Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive peak on-state current 600T 800T Value 600 800 8 73 Unit V A A SYMBOL Rth j-c PARAMETER Junction to .

Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protect.

* On-state rms current, IT(RMS) 8 A
* Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V
* Triggering gate current, IGT 0.2 to 15 mA Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control foun.