TTA0001 Datasheet

The TTA0001 is a PNP Transistor. Download the datasheet PDF and view key features and specifications below.

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Part NumberTTA0001
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier . down Voltage IC= -50mA ; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -9A; IB= -0.9A -2.0 V VBE(on) Base-Emitter On Voltage IC= -9A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V ; IE=0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE-1 D.
Part NumberTTA0001
DescriptionSilicon PNP Transistor
ManufacturerToshiba
Overview TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.) • Complementary to TTC0001 • Recommended for 100-W high-fideli. e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability tes.