| Part Number | TYN610F Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·In a full package ,plastic envelope ·High surge capability ·High state current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS. RISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRR=600V, Tj=25℃ 0.01 mA IDRM Repetitive peak off-state current VDR=600V, Tj=25℃ 0.01 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger volta. |