| Part Number | U310 Datasheet |
|---|---|
| Manufacturer | National Semiconductor |
| Overview | The U308 thru U310 series of N-channel JFETs is VHF designed for amplifier, oscillator and mixer applica- Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Power. - 10 mA 9fg 9ogs G P9 Drain Gate Capacitance Gate-Source Capacitance Equivalent Short-Circuit Input Noise Voltage Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gain V DS - 10V, V GS = -10V V DS = 10V, D l - 10mA V D S" 10V, D l - 10mA f = 450 MH; f - 100. |
U310 Datasheet and Specifications PDF
The U310 is a N-Channel JFET.
| Part Number | U310 Datasheet |
|---|---|
| Description | N-Channel JFET |
| Manufacturer | InterFET |
| Overview |
The -25V InterFET U310 JFET is targeted for higher gain VHF amplifiers, mixers, and oscillators. Gate leakages are typically less than 10pA at room temperatures.
Gate/Case Drain 2 Source
TO-52 Botto.
* InterFET N0072L Geometry * Low Noise: 2 nV/√Hz Typical * Low Ciss: 4pF Typical * RoHS Compliant * SMT, TH, and Bare Die Package options. Applications * Mixers * Oscillators * VHF/UHF Amplifiers Description The -25V InterFET U310 JFET is targeted for higher gain VHF amplifiers, mixers, and oscillat. |
| Part Number | U310 Datasheet |
|---|---|
| Description | Amplifier |
| Manufacturer | Micross |
| Overview |
U310 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U310
The U310 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 pack.
DIRECT REPLACEMENT FOR SILICONIX U310 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 Gpg = 11.5dB NF = 2.7dB
Maximum Temperatures Storage Temperature ‐55°C to +150°C * High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C *. |
| Part Number | U310 Datasheet |
|---|---|
| Description | JFET VHF/UHF AMPLIFIER |
| Manufacturer | Motorola Semiconductor |
| Overview | U308 U309 U310 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Gate Current Total Device Dissipation (& T/ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range S. . |