UG2004PT Datasheet
UG2004PT Datasheet (Taiwan Semiconductor)
Taiwan Semiconductor
AEC-Q101 qualified Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 25 20 15 FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100.
- Dual rectifier construction, positive center-tap - Ultrafast recovery time - Low reverse recovery current - Low forward voltage - Reduces switching losses - Reduces conduction losses - Low thermal resistance ideal solution for high operation temperature - Compliant to RoHS Directive 2011/65/EU and.
UG2004PT Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Ultrafast Rectifier FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high e.
*Guarding for over voltage protection
*Dual rectifier construction,positive center tap
*Metal of silicon rectifier,majority carrier conduction
*Low forward voltage,high efficiency
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching power suppl.