| Part Number | VS2302AT |
|---|---|
| Manufacturer | Vanguard Semiconductor |
| Overview |
VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an e.
*Ron(typ.)=30 mΩ @VGS=4.5V *Low On-Resistance *150°C Operating Temperature *Fast Switching *Lead-Free, RoHS Compliant VS2302AT 20V/3.2A N-Channel Advanced Power MOSFET Description VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed. |
VS2302AT Datasheet
The VS2302AT is a N-Channel Advanced Power MOSFET.
| Part Number | VS2302AT |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
VS2302AT-VB
VS2302AT-VB Datasheet
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at VGS = 2.5 V
0.050 at VGS = 1.8 V
ID (A)e 6a .
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converters * Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So. |