| Part Number | WFF12N60 Datasheet |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Overview |
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanch.
* 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V * Ultra-low Gate Charge(Typical 39nC) * Fast Switching Capability * 100%Avalanche Tested * Isolation Voltage ( VISO = 4000V AC ) * Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe. |
WFF12N60 Datasheet and Specifications PDF
The WFF12N60 is a Silicon N-Channel MOSFET.
| Part Number | WFF12N60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Wisdom technologies |
| Overview |
HIGH VOLTAGE N-Channel MOSFET
WFF12N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charg.
* Low Intrinsic Capacitances * Excellent Switching Characteristics * Extended Safe Operating Area * Unrivalled Gate Charge :Qg= 42nC (Typ.) * BVDSS=600V,ID=12A * RDS(on) :0.7 Ω (Max) @VG=10V * 100% Avalanche Tested GD S G! D ! * ◀▲ * * ! S TO‐220F G‐Gate,D‐Drain,S‐Sourse Absolute Ma. |