WFP12N60 Datasheet and Specifications PDF

HIGH VOLTAGE N-Channel MOSFET      WFP12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charg.

* Low Intrinsic Capacitances 
* Excellent Switching Characteristics 
* Extended Safe Operating Area 
* Unrivalled Gate Charge :Qg= 37nC (Typ.)
* BVDSS=600V,ID=12A
* RDS(on) :0.65 Ω (Max) @VG=10V
* 100% Avalanche Tested GDS D !
* G! ◀▲
*
*   ! S TO‐220    G‐Gate,D‐Drain,S‐Sourse    Absolute .

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanch.

* 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 43nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technolo.