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ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ v
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V ...
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Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SY...
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Complementary NPN-PNP transistors Low collector-emitter saturation voltage
Satisfactory linearity of foward current transfer ratio hFE
TO-3P package w...
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to case MAX 1.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specifie...
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D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth ...
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• 25 A Collector Current • Low Leakage Current −
ICEO = 1.0 mA @ 30 and 60 V
• Excellent DC Gain −
hFE = 40 Typ @ 15 A
• High Current Gain Bandwidth P...
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rrent
-5
A
@ Tc < 25° PC Power Dissipation @ Ta < 25°
125 Watts 3.5
TJ
Junction Temperature
http://www.DataSheet4U.net/
150 °C -65 to +150
Ts...
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Motorola
Power Innovations Limited
nELL
SavantIC
NTE
ON Semiconductor
INCHANGE
Comset Semiconductors
