0.030 Datasheet | Specifications & PDF Download

NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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UNISONIC TECHNOLOGIES CO., LTD TDA2030 14W HI-FI AUDIO AMPLIFIER LINEAR INTEGRATED CIRCUIT  DESCRIPTION The UTC TDA2030 is a monolithic audio powe

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Rating: 1 ★ (11 votes)

AXS2030 5.2W AB/D AXS2030、5.2W  AB/D AB/D。EMIFM  D： 。 －5.2W (VDD=5.0V, RL =2Ω，THD+N=10%)  AB： AXS2030PSRR －5.2W (VDD=5.0V, RL =2Ω，THD

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www.DataSheet4U.com w w w .D a S a t e e h U 4 t m o .c

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Rating: 1 ★ (10 votes)

JNR THERMISTOR SPECIFICATIONS JNR THERMISTOR SPECIFICATIONS Thermal Thermal Maximum Material Resistance Part Tolerance Imax. RImax. disspiation Tim

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TDA2030A 18 W hi-fi amplifier and 35 W driver Features ■ Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ) ■ Very

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0030(：CST-IC0890) 、 00308Ω1.5W， 。 0030，20dB ，0030，。 、 ¾ ¾ z 2.4V—6.8V z <1uA ¾ () z 8Ω1.5W k （Vcc=6.8V ,THD=10% ） ¾ e z SOP-8 z eT 、

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July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed spec

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June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancem

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July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effe

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( DataSheet : www.DataSheet4U.com ) YOUDA INTEGRATED CIRCUIT YD2030 18W HI-FI AUDIO AMPLIFIER¡ª DESCRIPTION The YD2030 is a monolithic audio power

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Rating: 1 ★ (9 votes)

Special Application Fuses Intrinsically Safe > Surface Mount > 308 Series 308 Series 30V Intrinsically Safe Fuse Pb RoHS Agency Approvals Agency

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IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-

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TDA2030A 18 W hi-fi amplifier and 35 W driver Features ■ Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ) ■ Very

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IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p

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SI-TECH SEMICONDUCTOR CO.,LTD S90N030R/S N-Channel MOSFET Features █ 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av

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HITANO ENTERPRISE CORP. Data Sheet Customer: Product: Multilayer Chip Varistor. C series wide range application Size : 0402/0603/0805/1206/1210/18

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