0.43-INCH Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB7437，IIRFB7437 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement

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isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)

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isc N-Channel MOSFET Transistor 2SK3431 FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2943 ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mo

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isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Co

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isc N-Channel MOSFET Transistor 2SK3430-S FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4310Z，IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement

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isc P-Channel MOSFET Transistor IRLR9343,IIRLR9343 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche te

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement

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isc N-Channel MOSFET Transistor 2SK3431-S FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-R

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Isc N-Channel MOSFET Transistor IRFS4310Z ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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Isc P-Channel MOSFET Transistor ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variation

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isc N-Channel MOSFET Transistor 2SK3435 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor 2SK3430 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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isc N-Channel MOSFET Transistor 2SK430L FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-R

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular

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