0.43-INCH Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SC4332-Z DESCRIPTION ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent l

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0.43-INCH SEVEN SEGMENT DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN

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0.43-INCH SEVEN SEGMENT DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN

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0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROD

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4330 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collect

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4430 DESCRIPTION ·NPN triple diffused planar silicon transistor ·High Switching Speed ·Wi

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Saturation Voltage- : VCE(sat)=0.8V(Max)@ (IC= 2A, IB= 0.2A) ·Collector-Emitter Sustaining Voltage

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isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120

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isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4437 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·1

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1433 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low

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Isc N-Channel MOSFET Transistor IRFS4321 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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isc N-Channel MOSFET Transistor IRFB4332，IIRFB4332 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤33mΩ ·Enhancement mode ·Fast Switching Spe

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isc P-Channel MOSFET Transistor IRLR9343,IIRLR9343 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche te

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor 2SK3435 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

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