035N08N Datasheet | Specifications & PDF Download

OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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HYG035N08NS2P/B N-Channel Enhancement Mode MOSFET Feature  80V/135A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

(23 views)

HYG035N08NS2C2 N-Channel Enhancement Mode MOSFET Feature  80V/105A RDS(ON)=2.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  H

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HYG035N08NS2P/B N-Channel Enhancement Mode MOSFET Feature  80V/135A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

(20 views)

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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